absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 51 i d @ v gs = 12v, t c = 100c continuous drain current 32.5 i dm pulsed drain current ? 204 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 51 a e ar repetitive avalanche energy ? 30 mj dv/dt p eak diode recovery dv/dt ? 7.3 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 ( for 5s) weight 3.3 (typical) g pd - 91396c pre-irradiation international rectifier?s radhard hexfet ? technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardened power mosfet surface mount (smd-2) 5/4/2000 www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number irhna7160 100k rads (si) 0.04 ? 51a jansr2n7432u irhna3160 300k rads (si) 0.04 ? 51a JANSF2N7432U irhna4160 600k rads (si) 0.04 ? 51a jansg2n7432u irhna8160 1000k rads (si) 0.04 ? 51a jansh2n7432u features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount light weight for footnotes refer to the last page irhna7160 100v, n-channel ref: mil-prf-19500/664 rad-hard ? hexfet ? mosfet technology smd - 2
2 www.irf.com irhna7160 pre-irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs =0 v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.11 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source ? ? 0.040 v gs = 12v, i d = 32.5a on-state resistance ? ? 0.045 ? v gs = 12v, i d = 51a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 16 ? ? s ( )v ds > 15v, i ds = 32.5a i dss zero gate voltage drain current ? ? 25 v ds = 80v,v gs =0v ? ? 250 v ds = 80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 310 v gs = 12v, i d = 51a q gs gate-to-source charge ? ? 53 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 110 t d (on) turn-on delay time ? ? 35 v dd = 50v, i d = 51a, t r rise time ? ? 150 r g = 2.35 ? t d (off) turn-off delay time ? ? 150 t f fall time ? ? 200 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 5300 ? v gs = 0v, v ds = 25v c oss output capacitance ? 1600 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 350 ? na ? nh ns a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.42 r thjpcb junction-to-pc board ? 1.6 ? solder to a 1? sq. copper clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 51 i sm pulse source current (body diode) ? ? ? 204 v sd diode forward voltage ? ? 1.8 v t j = 25c, i s = 51a, v gs = 0v ? t rr reverse recovery time ? ? 520 ns t j = 25c, i f = 51a, di/dt 100a/ s q rr reverse recovery charge ? ? 6.5 c v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from center of drain pad to center of source pad
www.irf.com 3 pre-irradiation irhna7160 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 600 to 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 25 ? 50 a v ds =80v, v gs =0v r ds(on) static drain-to-source ? ? 0.045 ? 0.062 ? v gs = 12v, i d =32.5a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.04 ? 0.057 ? v gs = 12v, i d =32.5a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhna7160 (jansr2n7432u) 2. part numbers irhna3160 (JANSF2N7432U), irhna4160 (jansg2n7432u) and irhna8160 (jansh2n7432u) fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.8 ? 1.8 v v gs = 0v, i s = 51a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 100 100 100 80 60 br 36.8 305 39 100 90 70 50 ? 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br
4 www.irf.com irhna7160 pre-irradiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 51a
www.irf.com 5 pre-irradiation irhna7160 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 280 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 51a v = 20v ds v = 50v ds v = 80v ds 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
6 www.irf.com irhna7160 pre-irradiation fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation irhna7160 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 12v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 23a 32a 51a
8 www.irf.com irhna7160 pre-irradiation ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25 c, l= 0.38mh peak i l = 51a, v gs = 12v ? i sd 51a, di/dt 410a/ s, v dd 100v, t j 150 c case outline and dimensions ? smd-2 foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 5/00
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